| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which holds a light-emitting characteristic of light emitted from a light emitting edge surface according to light excited from an active layer, and where light returned from outside is reduced, in a semiconductor light-emitting device having a structure with a laminated semiconductor layer; and also to provide a simple method for manufacturing the semiconductor light-emitting device. SOLUTION: A first dielectric layer 21 is formed on an edge surface 10b containing a light-emitting edge surface 10a of the laminated semiconductor layer, then, a light-sensitive mask material layer is applied on the first dielectric layer 21. A voltage is then applied to the semiconductor laser to oscillate the semiconductor laser, to harden selectively a part of the mask material layer according to the light-emitting edge surface 10a, and to leave the hardened mask material layer on this portion. Then, a second dielectric layer 22 is formed on the surface of the first dielectric layer 21 including the hardened light-sensitive mask layer, and the remaining mask material layer and the second dielectric layer 22 formed on this layer are removed. COPYRIGHT: (C)2006,JPO&NCIPI
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