| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving reproducibility of a current constriction layer by oxidation. SOLUTION: A current striction section 50 including a current constriction layer 51 and intermediate layers 52 and 53 is provided between a 1st p-type clad layer 41A and 2nd p-type clad layer 41B made of p-type AlGaInP mixed crystal. The current constriction layer 51 has a conductive region 51A made of AlAs or AlGaAs mixed crystal and a nonconductive region 51B made of an insulating oxide containing aluminum. The intermediate layers 52 and 53 are provided between the current constriction layer 51A, and 1st p-type clad layer 41A and 2nd p-type clad layer 41B and then mixed crystal of phosphorus and arsenic is prevented from being formed between them, thereby increasing the reproducibility by oxidation. The composition of aluminum that the intermediate layers 52 and 53 is 0.4 to, preferably, 0.98 or, more preferably, 0.9. COPYRIGHT: (C)2006,JPO&NCIPI
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