| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam exposure system in which even a writing pattern with many oblique lines can be developed to pixel values at a high rate. SOLUTION: Figure data 100 is imparted with attribute data 102, e.g. an external cell of design data, a microcell, power supply wiring, and cell wiring, or design data is imparted with precision information 103, e.g. high precision, standard precision, and low precision. A figure developing section 230 subdivides figure information 101 of oblique line, rectangle, or the like, into small rectangle information dependent on the precision information 103. An image forming section 240 determines the occupation area of a pixel corresponding to an electron beam from the divided rectangle information, and an output section 250 outputs it as the pixel value of every pixel to a blanking control section. Consequently, developing rate of an oblique line can be enhanced especially. Furthermore, adjustment of the electron beam exposure system is facilitated because the precision attribute of design data can be separated from the characteristic of the system. COPYRIGHT: (C)2006,JPO&NCIPI
|
