| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal, by which a high quality SiC single crystal can be stably grown at a high speed and which can be made to correspond to both of the diameter enlargement of a bulk single crystal and the quality enhancement of a thin single crystal. SOLUTION: In a method for continuously growing the SiC single crystal downward with a seed crystal as a starting point by forming such a temperature gradient that the temperature of the upper end surface of a solvent is lower than that of the lower end surface of the solvent in a columnar work by heating the lower end of a raw material rod as the lower end of the columnar work by a heating section and at the same time, cooling the upper end of a supporting rod as the upper end of the columnar work by a cooling section by using a temperature gradient furnace equipped with a heat insulating wall surrounding the outer periphery of the columnar work constituted by stacking the raw material rod comprising SiC, the solvent, the seed crystal, and the supporting rod supporting the seed crystal on its lower end, the heating section for heating the lower end of the columnar work via a heating susceptor, and the cooling section for cooling the upper end of the columnar work via a cooling susceptor, the solvent comprises Si, Y and at least one selected from the elements of group IIIB of the periodic table. COPYRIGHT: (C)2006,JPO&NCIPI
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