| 摘要 |
PROBLEM TO BE SOLVED: To reduce arcing during plasma processing such as thin film deposition without disturbing process parameters (gas flow, electrical field, etc.) in a processing chamber. SOLUTION: In a first embodiment, a method is provided for use during plasma processing. The first method includes the steps of (1) placing a substrate on a substrate holder of a plasma chamber; (2) positioning a cover frame adjacent and below a perimeter of the substrate; and (3) employing the cover frame to reduce arcing during plasma processing within the plasma chamber. Numerous other embodiments are provided. COPYRIGHT: (C)2006,JPO&NCIPI
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