发明名称 |
Spin transistor, programmable logic circuit, and magnetic memory |
摘要 |
A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer and the second conductive layer, and introduces electron spin between the first conductive layer and the second conductive layer; a gate electrode that is located above the channel region; and a tunnel barrier film that is located between the channel region and at least one of the first conductive layer and the second conductive layer.
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申请公布号 |
US2005282379(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050149267 |
申请日期 |
2005.06.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO YOSHIAKI;SUGIYAMA HIDEYUKI |
分类号 |
G11C11/16;H01L21/00;H01L21/4763;H01L21/8246;H01L27/01;H01L27/12;H01L27/22;H01L29/66;H01L29/82;H01L31/0392;(IPC1-7):H01L21/00;H01L21/476;H01L31/039 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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