| 发明名称 |
Magnetic random access memory and method of manufacturing the same |
| 摘要 |
A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 300 or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.
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| 申请公布号 |
US2005281079(A1) |
申请公布日期 |
2005.12.22 |
| 申请号 |
US20050213855 |
申请日期 |
2005.08.30 |
| 申请人 |
YODA HIROAKI;AIKAWA HISANORI;UEDA TOMOMASA;KISHI TATSUYA;KAJIYAMA TAKESHI;ASAO YOSHIAKI |
发明人 |
YODA HIROAKI;AIKAWA HISANORI;UEDA TOMOMASA;KISHI TATSUYA;KAJIYAMA TAKESHI;ASAO YOSHIAKI |
| 分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
H01L27/105 |
| 代理机构 |
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