| 发明名称 |
Trench FET with reduced mesa width and source contact inside active trench |
| 摘要 |
A trench FET has source contacts which contact the entire top surface of source regions, and contact a portion of side walls of the source regions. The side walls of the source regions form a portion of the side walls of the trenches in the trench FET.
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| 申请公布号 |
US2005280079(A1) |
申请公布日期 |
2005.12.22 |
| 申请号 |
US20050157371 |
申请日期 |
2005.06.21 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
JONES DAVID P. |
| 分类号 |
H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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