发明名称 |
METHOD FOR MANUFACTURING MATERIAL COMPOUND WAFER |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a material compound wafer, particularly, a material compound wafer of semiconductor on quartz type. <P>SOLUTION: This method includes steps of: (a) forming a predetermined dividing region 5 on a source substrate 1; (b) attaching the source substrate 1 to a handle substrate 7 in order to form a source-handle complex 9; (c) thermally annealing the source-handle assembly 9 for embrittlement of the predetermined dividing region; and (d) separating the source substrate 1 by means of mechanical division in the predetermined dividing region. The purpose of this is to bring the source-handle assembly 9 into a state of being at a separation temperature higher than room temperature in step (d), to essentially keep the same the degree of embrittlement of the dividing region at this separation temperature, and perform the mechanical division at this temperature. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2005354078(A) |
申请公布日期 |
2005.12.22 |
申请号 |
JP20050171177 |
申请日期 |
2005.06.10 |
申请人 |
SOI TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
MAURICE THIBAUT;NGUYEN PHUONG;GUIOT ERIC |
分类号 |
H01L27/12;H01L21/02;H01L21/30;H01L21/46;H01L21/762;H01L29/76;(IPC1-7):H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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