发明名称 METHOD FOR PHOTOMASK DEFECT CORRECTION USING COMPOSITE APPARATUS OF CONVERGENCE ELECTRON BEAM DEVICE AND ATOMIC FORCE MICROSCOPE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve the throughput for an AFM (atomic force microscope) scratching process, to correct even a small defect with high accuracy for correction of a white defect, and to repair in a short time even for over-scratching in an AFM scratching process. <P>SOLUTION: The throughput of an AFM scratching process is improved by compounding an electron optical system 6 and an AFM head 1 in vacuum and making use of high resolving power of an electron beam device and of a short time for observation as much as possible. Even a small white defect can be corrected with high accuracy by depositing a white defect correction film by an electron beam while supplying the source material of the light shielding film and then scratching an excess part by the AFM scratching process. Even when the film is excessively scratched by the AFM scratching process, the defect can be repaired in a short time by depositing the white defect correction film with an electron beam while supplying the source material of the light shielding film, and scratching an excess part by the AFM scratching process. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005352048(A) 申请公布日期 2005.12.22
申请号 JP20040171244 申请日期 2004.06.09
申请人 SII NANOTECHNOLOGY INC 发明人 TAKAOKA OSAMU;HAGIWARA RYOJI
分类号 G01N13/16;G01N23/00;G03F1/72;G21K7/00;H01L21/027;(IPC1-7):G03F1/08 主分类号 G01N13/16
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