发明名称 |
Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh |
摘要 |
A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
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申请公布号 |
US2005281081(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20040869315 |
申请日期 |
2004.06.16 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES |
发明人 |
FULLERTON ERIC E.;MAAT STEFAN;THIELE JAN-ULRICH |
分类号 |
G11C11/15;G11C11/16;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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