Laterally diffused MOS device

摘要

Significant improvement in gain is achievable in a laterally diffused MOS device without substantial change in threshold voltage. Such improvement in a device having a channel with lateral dopant gradient of at least a factor of 10 per micrometer of channel is attained using a P-type gate. For example, a g_m of 0.02 S/mm (at VDS=28 V) and a drain breakdown of more than 70V with gate oxide of 350 Å is possible with a threshold voltage of 3.5 volts.