发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory provided with a word line driving circuit which has a small circuit scale and stably operates. SOLUTION: This semiconductor memory is provided with a first driving circuit 11 for driving a word line driving signal 15 toward first potential, a second driving circuit 12 for driving the word line driving signal 15 toward second potential, a third driving circuit 13 for driving the word line driving signal 15 toward third potential, and a driving control circuit 14. The driving control circuit 14 operates the first driving circuit 11 when an input signal 16 is a first logical value, operates the second driving circuit 12 when the input signal 16 shifts from the first logical value to a second logical value and operates the third driving circuit 13 when detecting that the word line driving signal 15 is driven toward to the second potential. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005353204(A) 申请公布日期 2005.12.22
申请号 JP20040174141 申请日期 2004.06.11
申请人 ELPIDA MEMORY INC 发明人 FUJIMA SHIRO
分类号 G11C11/407;G11C8/00;G11C8/08;(IPC1-7):G11C11/407 主分类号 G11C11/407
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