发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can secure a durability to thermal cycle equivalent to that when a lead-contained solder is used, can suppress a thermal resistance and secure a heat resistance, and can suppress increase in manufacturing cost, and also a method for manufacturing the semiconductor device. SOLUTION: An insulating substrate 2 is joined onto a main surface of a heatsink 1 made of a copper material. A rear-side pattern 5 of the insulating substrate 2 is joined onto a main surface of the heatsink 1 via a solder layer 7 on the rear side of the substrate, whereby the insulating substrate 2 is fixed to the surface of the heatsink 1. Angle grooves 15, inner walls of which are inwardly tilted, are disposed in the outside of four corners of a ceramic base material 3 of the insulating substrate 2 in the main surface of the heatsink 1 outside of end edges of the ceramic base material 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005353945(A) 申请公布日期 2005.12.22
申请号 JP20040175074 申请日期 2004.06.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIBORI HIROSHI;SHINOHARA TOSHIAKI;MAEDA HARUMI
分类号 H01L23/40;H01L23/36;(IPC1-7):H01L23/40 主分类号 H01L23/40
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