发明名称 Structure and method for field emitter tips
摘要 Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.
申请公布号 US2005282301(A1) 申请公布日期 2005.12.22
申请号 US20050209271 申请日期 2005.08.23
申请人 MICRON TECHNOLOGY, INC. 发明人 GILTON TERRY L.;MORGAN PAUL A.
分类号 H01J1/05;H01J1/14;H01J1/304;H01J1/38;H01J1/48;H01J9/02;H01J9/38;H01J19/06;H01L21/00;(IPC1-7):H01L21/00 主分类号 H01J1/05
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