发明名称 |
Structure and method for field emitter tips |
摘要 |
Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.
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申请公布号 |
US2005282301(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050209271 |
申请日期 |
2005.08.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GILTON TERRY L.;MORGAN PAUL A. |
分类号 |
H01J1/05;H01J1/14;H01J1/304;H01J1/38;H01J1/48;H01J9/02;H01J9/38;H01J19/06;H01L21/00;(IPC1-7):H01L21/00 |
主分类号 |
H01J1/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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