发明名称 |
Magnetic random access memory array having bit/word lines for shared write select and read operations |
摘要 |
A random access memory array includes random access memory elements arranged in a rows and columns. The elements of each row have a word line and a write digit line and the elements of each column have a bit line and a write bit line. A first selection circuit/transistor for each row has a first source-drain path coupled in the write digit line and a gate terminal coupled to the word line. A second selection circuit/transistor for each column has a second source-drain path coupling in the write bit line and a gate terminal coupled to the bit line. A first write signal is applied to one word line to actuate the first selection circuit/transistor for the row corresponding to that one word line and cause a write current to flow through the first source-drain path of the actuated first selection circuit/transistor and the corresponding write digit line to write data into certain memory elements in that row. A second write signal is applied to one bit line to actuate the second selection circuit/transistor for the column corresponding to that one bit line and cause a write current to flow through the second source-drain path of the actuated second selection circuit/transistor and the corresponding write bit line to write data into at least one memory element in that column.
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申请公布号 |
US2005281080(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050159858 |
申请日期 |
2005.06.23 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
DRAY CYRILLE;FREY CHRISTOPHE;LASSEUGUETTE JEAN;BARASINSKI SEBASTIEN;FOURNEL RICHARD |
分类号 |
G11C7/18;G11C8/10;G11C11/16;(IPC1-7):G11C11/14 |
主分类号 |
G11C7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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