| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein work function of a gate electrode can be optimized without giving adverse effects on the characteristics and reliability of a transistor. SOLUTION: The semiconductor device is provided with a semiconductor substrate 100, a gate insulating film 102 which is arranged on the semiconductor substrate and contains first metal element and oxygen, a metal silicide film 114 which is arranged on the gate insulating film and contains second metal element, and the gate electrode which is interposed between the gate insulating film and the metal silicide film and contains p-type dopant element. Gibb's free energy of a first system which contains insulator containing the first metal element and oxygen, the p-type dopant element and silicon is smaller than Gibb's free energy of a second system which contains compound containing the first metal element and the p-type dopant element, and silicon oxide. COPYRIGHT: (C)2006,JPO&NCIPI
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