| 摘要 |
PROBLEM TO BE SOLVED: To form the pattern of a stopper film without using lithography and etching, and to prevent dishing in flattening using chemical/mechanical polishing. SOLUTION: Grooves 4 of element separation are formed on the surface of a silicon substrate 1, and a first silicon oxide film 6 is formed so that the grooves are embedded. The stopper film 7 and a second silicon oxide film 8 are sequentially formed on the film. A polishing rate of chemical/mechanical polishing of the stopper film 7 is smaller than that of the first silicon oxide film 6 and the second silicon oxide film 8. The etching rate of the stopper film 7 by hydrofluoric acid water solution and dry etching is set to be equal to that of the first silicon oxide film 6. The stopper film 7 functions as the stopper film in all patterns in chemical/mechanical polishing and it can prevent dishing irrespective of width of element separation. When the stopper film 7 is removed, flatness of the surface on the silicon substrate 1 can be kept. COPYRIGHT: (C)2006,JPO&NCIPI
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