| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanter for controlling a parallel degree and a divergence angle when an ion beam incoming onto a substrate to improve implantation accuracy of ions and also for uniformly implant the ions. SOLUTION: The implanter includes an ion beam collecting device, a device to make parallelism and a measurement device to measure the parallel degree and the divergence angle to control the collecting device and the device to make parallelism so as to fit the parallel degree and the divergence angle of the ion beam into prescribed values. The measurement device to measure the parallel degree and the divergence angle is provided with a beam split slit and a movable Faraday cup to measure a current amount of the ion beam passed through the slit. COPYRIGHT: (C)2006,JPO&NCIPI
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