发明名称 |
MOSFET and method of fabricating the same |
摘要 |
A MOSFET includes a semiconductor substrate with a first region having a relatively thick first thickness and a second region having a relatively thin second thickness; a gate insulating layer pattern formed on the first region of the semiconductor substrate; a gate conductive layer pattern formed on the gate insulating layer pattern; an epitaxial layer formed on the second region of the semiconductor substrate so as to have a predetermined thickness; spacers formed on sidewalls of the gate conductive layer pattern and part of the surface of the epitaxial layer; a lightly-doped first impurity region formed in the semiconductor substrate disposed below the spacers and in the epitaxial layer; and a heavily-doped second impurity region formed in a portion of the semiconductor substrate, exposed by the spacers.
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申请公布号 |
US2005282344(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050177185 |
申请日期 |
2005.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JIN YOU-SEUNG;AHN JONG-HYON |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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