| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate, forming a resist on the semiconductor substrate so that the resist contacts only one side face of the gate electrode, and tilting the gate electrode by shrinking or expanding the resist.
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| 申请公布号 |
US2005282320(A1) |
申请公布日期 |
2005.12.22 |
| 申请号 |
US20040986225 |
申请日期 |
2004.11.12 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HASUIKE ATSUSHI |
| 分类号 |
H01L21/285;H01L21/338;H01L29/423;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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