| 摘要 |
A field emission device ( 5 ) includes cathode electrodes ( 51 ), emitters ( 52 ) formed on the cathode electrodes, grid electrodes ( 54 ) formed over the cathode electrodes at a distance apart from the emitters, and isolated films ( 55 ) formed on surfaces of the grid electrodes neighboring the emitters. Preferably, the isolated film has a thickness ranging from 0.1 to 1 microns. The isolated film may be a film made of one or more insulating materials, such as SiO<SUB>2 </SUB>and Si<SUB>3</SUB>N<SUB>4</SUB>. Alternatively, the one or more insulating materials can be selected from a material having a high secondary electron emission coefficient, such as MgO, Al<SUB>2</SUB>O<SUB>3 </SUB>and ZnO. Additionally, the isolated film can be further formed on a second surface of the grid electrode distal from the emitter.
|
