发明名称 Micro-etching method to replicate alignment marks for semiconductor wafer photolithography
摘要 A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
申请公布号 US2005282396(A1) 申请公布日期 2005.12.22
申请号 US20040872238 申请日期 2004.06.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN YU-LIANG;LO HENRY;CHANG CHUNG-LONG;HUANG GORGE;LU TONY;YEH GNESH;LIANG CANDY;LIN CHUN-HSIEN;ZHOU MEI SHENG;WU SUNNY;LIU AI-SEN;HUANG CHENG-LIN;CHEN LI-JUI;WANG SHIH C.
分类号 H01L21/00;H01L21/302;H01L21/311;H01L21/336;H01L21/461;H01L23/544;(IPC1-7):H01L21/336 主分类号 H01L21/00
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