| 摘要 |
<p>Disclosed is a semiconductor storage which operates stably and can be produced by an MOS process. A storage transistor (STr) comprises impurity diffused regions (22, 24), a channel forming region (23a), a charge storage node (23b), a gate oxide film (18) and a gate electrode (19). The gate electrode (19) is connected to a gate line (GL), and the impurity diffused region (24) is connected to a source line (SL). The storage transistor (STr) stores data "1" or data "0" by creating a state where holes are stored in the charge storage node (23b) or a state where holes are not stored in the charge storage node (23b). An access transistor (ATr) comprises impurity diffused regions (20, 22), a channel forming region (21), a gate oxide film (16) and a gate electrode (17). The impurity diffused region (20) is connected to a bit line (BL).</p> |
