| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that emits an optionally colored light with high intensity, especially a light containing red or a white light by a simple and convenient method without inducing degradation of light emission efficiency. <P>SOLUTION: The semiconductor light emitting device 10 is provided with: a sapphire substrate 11; a base layer 12 made of GaN; an n-type contact layer 13 made of GaN, an n-type clad layer 14 made of n-type Al<SB>0.15</SB>Ga<SB>0.85</SB>N; a light emitting layer 15 doped with Eu that has a quantum well structure wherein an In<SB>0.15</SB>Ga<SB>0.85</SB>N well layer and a GaN barrier layer are alternately stacked at three cycles; a p-type clad layer 16 made of p-type Al<SB>0.15</SB>Ga<SB>0.85</SB>N; and a p-type contact layer 17 made of p-type GaN. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
