| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of completing die bond of a very thin semiconductor element in high yield. <P>SOLUTION: A wafer 10 back-ground to be about 0.5 to 2 times of a dicing sheet 13 such as 50μm is stuck to the dicing sheet 13. An X-axis (or Y-axis) direction is cut off together with the dicing sheet 13 completely, and the Y-axis direction (or X-axis direction) is cut off to be about 2/3 times of the wafer 10. Semiconductor elements 20 connected in a line in the state of a slip are carried onto a base mount 30. Just before adhering to the base mount 30, the dicing sheet 13 is exfoliated while fixing it with a vacuum adsorption collet 33, and a semiconductor element 40 is adhered to the base mount using an adhesive. The semiconductor element 40 adhered to a die pad with a cutting tool 31 is cut off from the semiconductor elements 20 connected in a line to complete the die bond of the thin semiconductor element. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
