Interconnect structures are fabricated by methods that comprise depositing a thin conformal passivation dielectric and/or diffusion barrier cap and/or hard mask by an atomic layer deposition or supercritical fluid based process.
申请公布号
WO2005122195(A2)
申请公布日期
2005.12.22
申请号
WO2005US18196
申请日期
2005.05.23
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;HUANG, ELBERT, E.;KIM, HYUNGJUN;MILLER, ROBERT, D.;NITTA, SATYANARAYANA, V.;PURUSHOTHAMAN, SAMPATH
