Solid electrolyte memory cell production method for semiconductor memories involves doping solid electrolyte material with dopant and then irradiating cell with suitable ions or ion beam either partly or completely

摘要

The method involves production of a solid electrolyte memory cell which has a memory section. The cell has a solid electrolyte material area (11) made up of a solid electrolyte material (11'). The area is activated by doping it with a dopant (12) and then the cell is irradiated with ions or ion beam (30) either partly or completely.