Semiconductor memory used in semiconductor switching devices comprises an arrangement having storage material formed as a number of molecules arranged between a first lower electrode and a second upper electrode

摘要

Semiconductor memory comprises an arrangement having storage material (16) formed as a number of molecules arranged between a first lower electrode (14) and a second upper electrode (18). The molecules have different chemical-physical states with different information states. The lower and/or upper electrodes are formed completely or partially from gallium arsenide. The molecules are formed as a number of mono layers.