发明名称 COLD-CATHODE FIELD ELECTRON EMISSION ELEMENT, ITS MANUFACTURING METHOD, AND COLD-CATHODE FIELD ELECTRON EMISSION DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a cold-cathode field electron emission element with a structure enabling uniformalization of electron emission state as much as possible. <P>SOLUTION: The cold-cathode field electron emission element comprises a cathode electrode 11, a resistive element layer 41 formed on the cathode electrode 11, an insulating layer 12, a gate electrode 14, first and second openings 14A, 14B, and an electron emission part 15 provided at a part of the insulating layer located in an overlapped area, exposed to the second opening communicated with the first opening as well as a bottom part of the second opening 14B and formed on the resistive element layer 41. An electron emission part projection image is included in a first opening bottom part projection image, as well as in a second opening bottom part projection image, and a part 41B of the resistive element layer corresponding to a region pinched by a contour 14a of the first opening projection image or that of the second opening bottom part projection image 14b and that of the electron emission part projection image has a higher electric resistance value than that of other parts 41A of the resistive element layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005353444(A) 申请公布日期 2005.12.22
申请号 JP20040173579 申请日期 2004.06.11
申请人 SONY CORP 发明人 NEGISHI EISUKE
分类号 H01J29/04;H01J1/304;H01J9/02;H01J31/12;(IPC1-7):H01J1/304 主分类号 H01J29/04
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