| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element which is good in an optical characteristic and electrical characteristic, and can easily carry out fining of a pixel cell. SOLUTION: The solid-state imaging element includes a semiconductor layer 1 where a light receiver is formed, and wiring layers 10, 13 which are formed on the surface side of the semiconductor 1. The element has a structure which makes light come into from the back side of the semiconductor layer 1; and is constructed so that a read out transistor 6, which is to read out selectively a signal charge from a first conductive type area 3 making up the light receiver to a pixel forming circuit formed on the surface side of the semiconductor layer 1, is formed inside the semiconductor layer 1. Moreover, for example, the gate of the read out transistor 6 is constructed with a second conductive type area 15 formed inside the semiconductor layer 1. COPYRIGHT: (C)2006,JPO&NCIPI |
