| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, where finning of a semiconductor substrate is made possible, without using an SOI substrate, and which contains a solid-state imaging element of back irradiation type. <P>SOLUTION: In the semiconductor device 22, an end detector 42 is composed of a layer 43, where a material different from a semiconductor substrate 22 is embedded and is formed on the semiconductor substrate 22. In the manufacturing method of the device, the semiconductor substrate is thinned from the back to the end detector 42, the compositions of a semiconductor element of the solid imaging element etc. are formed on the surface and on the back sides of the semiconductor substrate 22, and a supporting substrate 34 is laminated on the surface side of the semiconductor substrate 22. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
