FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a horizontal MOSFET which has the large breakdown voltage at the drain-source junction and is reduced in drain-source coupling capacitance. SOLUTION: By introducing an n-type dopant such as As, Sb, and phosphorus into an n+substrate 110, boron atoms, Al atoms, etc. contained in a p+introduction layer 114 and As atoms, Sb atoms, phosphorus atoms, etc. contained in the n+substrate 110 attract each other by Coulomb's force at the time of heat treatment of a p+source buried layer 112a, etc., resulting in suppression of the rising up of the n+substrate 110. By this method, the effective epitaxial thickness can be large. Consequently, the n-channel type horizontal MOSFET 100 having the large breakdown voltage at the drain-source junction and reduced in drain-source coupling capacitance can be materialized. COPYRIGHT: (C)2006,JPO&NCIPI