| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce degradation of the polarization characteristics of a capacitor insulating film, when a ferroelectric capacitor is heat-treated in a reducing atmosphere. <P>SOLUTION: A semiconductor device includes a first hydrogen barrier film, a capacitor element formed on the first hydrogen barrier film, and a second hydrogen barrier film formed so as to cover the capacitor element. In a boundary region where the first hydrogen barrier film and the second hydrogen barrier film meet, the first hydrogen barrier film and the second hydrogen barrier film closely adhere to each other, without permitting the presence of a silicon oxide film therein. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
