| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein the gate metal layer at the lower layer of a pad electrode is cured, and fail in wire bonding frequently occurs in the case of an embedded gate electrode structure although the gate metal layer is provided under the pad electrode in a compound semiconductor device. <P>SOLUTION: The pad electrode is formed only by a pad metal layer without providing any gate metal layers. A high-concentration impurity region is provided at the lower portion of the pad electrode, and the pad electrode is directly struck to the substrate. Prescribed isolation can be secured by the high-concentration impurity region, thus avoiding fail in wire bonding by further curing the gate metal layer in structure without any need for the nitride film as before, and hence improving reliability and yields even in the gate electrode structure for improving the characteristics of an FET. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
