发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, BOOSTING CIRCUIT AND CAPACITOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the deterioration of characteristics due to a parasitic capacity generated in the surroundings of a capacitor. <P>SOLUTION: The capacitor 532 of a boosting circuit is constituted of a well capacitor. Further, a part of a first wiring layer 26 for impressing a voltage on the n-type well 21 of the well capacitor is formed so as to cover the upper part of a gate electrode 23. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2005353760(A) |
申请公布日期 |
2005.12.22 |
申请号 |
JP20040171584 |
申请日期 |
2004.06.09 |
申请人 |
TOSHIBA CORP |
发明人 |
WATANABE YOSHIHISA |
分类号 |
G11C16/06;G11C16/04;G11C16/08;G11C16/30;H01L21/822;H01L21/8247;H01L27/04;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H01L29/94;(IPC1-7):H01L21/822;H01L21/824 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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