| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the influence of program disturbance to the minimum, resulting from nonselective high voltage when data is written. <P>SOLUTION: This nonvolatile semiconductor memory is provided with a memory cell array 14; a page buffer 24 which is connected with the memory cell array 14, and which holds a program verified result in a writing operation repeating data writing and program verification; a bit scan circuit 18 which decides whether the number of fail bits is not more than the number of reference bits, based on the program verified result which is connected to the page buffer 24 and held in the page buffer 24; a register 22 which is connected to the bit scan circuit 18 and holds a decision result of the bit scan circuit 18; and a sequencer 20 which controls an operating sequence of the writing operation and the bit scan circuit 18, and stops the writing operation, leaving the number of fail bits in response to a temporarily storing result of the register 22. Further, a data writing method for the nonvolatile semiconductor memory is disclosed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
