| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate with a trench-embedded element isolation region, capable of suppressing a leakage current due to crystal defects in the device of a low-drive voltage and securing the field inversion withstand voltage of the device of a high-drive voltage. SOLUTION: An oxide film 13 is embedded in the trench 12 of a prescribed depth on a silicon substrate 11, and element isolation regions 141 and 142 are formed. The element isolation region 141 is formed in a device region A1 to which a first drive voltage is supplied. The element isolation region 142 is formed in a device region A2 to which a second drive voltage lower than the first drive voltage is supplied. In the element isolation region 142, the height of the embedded oxide film 13 is lower than the one in the element isolation region 141. Thus, by comparison, in the same volume part of the trench 12, the volume of the embedded oxide film 13 is smaller in the element isolation region 142 than that in the element isolation region 141. COPYRIGHT: (C)2006,JPO&NCIPI
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