Transistor with vertical dielectric structure

摘要

A transistor ( 103 ) with a vertical structure ( 113 ) that includes a dielectric structure ( 201 ) below a semiconductor structure ( 109 ). The semiconductor structure includes a channel region ( 731 ) and source/drain regions ( 707, 709 ). The transistor includes a gate structure ( 705, 703 ) that has a portion laterally adjacent to the semiconductor structure and a portion laterally adjacent to the dielectric structure. In one embodiment, the gate structure is a floating gate structure wherein a control gate structure ( 719 ) also includes portion laterally adjacent to the dielectric structure and a portion laterally adjacent to the semiconductor structure. In some examples, having a portion of the floating gate and a portion of the control gate adjacent to the dielectric structure acts to increase the control gate to floating gate capacitance without significantly increasing the capacitance of the floating gate to channel region.