发明名称 |
LATERAL CHANNEL TRANSISTOR |
摘要 |
A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher source/drain blocking voltage. A backside gate is insulated from the channel region using a low doped layer of the opposite conductivity type than the channel region to support the rated blocking voltage of the device. |
申请公布号 |
WO2005122268(A2) |
申请公布日期 |
2005.12.22 |
申请号 |
WO2005US19460 |
申请日期 |
2005.06.03 |
申请人 |
GENESIC SEMICONDUCTOR INC;SINGH, RANBIR |
发明人 |
SINGH, RANBIR |
分类号 |
H01L29/15;H01L29/739;H01L29/808;H01L31/0312 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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