| 摘要 |
<p>A magnetic memory comprising a plurality of MTJ elements each having a fixed layer, a free layer, and a nonmagnetic barrier layer interposed between the fixed layer and the free layer, an interconnect line feeding a current to be used for writing data into the MTJ element, and a plurality of ferroelectric cladding layers covering the interconnect line. One cladding layer is provided for each of the plurality of MTJ elements.</p> |
