发明名称 NON-THERMAL PLASMA REACTOR FOR LOW PRESSURE DROP AND LOW SPECIFIC ENERGY DENSITY
摘要 <p>The present invention is related to a cold plasma reactor for low pressure drop and low energy density using a dielectric barrier discharge and a method for fabricating the same, the reactor being used for (1) treating various noxious gases such as a nitrogen oxide(NOx), a volatile organic compounds(VOCs) , and a stinking material, (2) generating ozone and ozone water, and (3) generating a chemically reactive species having high chemical reactivity in order to treate a surface of a metal, a ceramic and a polymer material. The cold plasma reactor comprises a cylindrical electrode rod, the cylindricalelectrode rod comprising a dielectric cylinder with a hole formed in the center thereof and a metal rod inserted into the hole, or a metal paste applied on the inner surface of the hole, and a both side structure formed by installing numbers of the cylindrical electrode rods spaced apart with a regular distance in parallel. In the both side structure, metal leads of neighboring electrode rods are positioned opposite to each other to prevent arc discharge from being generated and to generate stable plasma. The cold plasma reactor for low pressure drop and low energy density according to the present invention is applied to a system which (1) minimizes pressure drop of a flow occurred in a conventional art, (2) consumes low plasma generating power for handling mass flow and prevents oxidation and corrosion of the metal electrode, and (3) is not influenced by a direction of a flow.</p>
申请公布号 WO2005120684(A1) 申请公布日期 2005.12.22
申请号 WO2005KR01715 申请日期 2005.06.08
申请人 KOREA INSTITUTE OF MACHINERY AND MATERIALS;CHA, MIN-SUK;SONG, YOUNG-HOON;LEE, JAE-OK;KIM, KWAN-TAE;KIM, SEOCK-JOON;KIM, HONG-SIK 发明人 CHA, MIN-SUK;SONG, YOUNG-HOON;LEE, JAE-OK;KIM, KWAN-TAE;KIM, SEOCK-JOON;KIM, HONG-SIK
分类号 B01D53/32;C23C16/54;(IPC1-7):B01D53/32 主分类号 B01D53/32
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