| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-quality Dumet wire 1, having a flat part 9 on the outer surface thereof and moreover, having no minute cracks in a copper suboxide film of the outermost surface, at a low cost. <P>SOLUTION: The Dumet wire 1 for glass-sealed semiconductor device is constituted of a core 2, a copper layer or a copper containing alloy layer 3 covering the periphery of the core 2, and the cuprous oxide film 4 covering the surface of the copper layer or the copper-containing alloy layer 3. In such a Dumet wire 1, generation of minute cracks in the cuprous oxide film 4 is prevented, by forming previously a flat part 9 on at least a part of surface of a wire consisting of the core 2 and the copper layer or the copper containing alloy layer 3 covering the periphery of the core, under the condition before forming the copper suboxide film 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
