| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a reverse connection preventive diode is formed in the same chip in which a semiconductor circuit is formed. SOLUTION: The semiconductor device comprises a P board 61, a semiconductor layer 63 formed on the P board 61, a semiconductor circuit formed in a given area in the semiconductor layer 63, and a diode 33 formed in an area different from the given area in the semiconductor layer 63. An anode area constituting the diode 33 is connected to the positive electrode terminal of a power supply, and a cathode area constituting the diode 33 is connected to the semiconductor circuit. The P board 61 is insulated from the area of the diode 33 in the semiconductor layer 63 via an insulating layer 64. COPYRIGHT: (C)2006,JPO&NCIPI
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