发明名称 |
Method for manufacturing semiconductor substrate and semiconductor substrate |
摘要 |
A method for manufacturing a semiconductor substrate comprises the steps of: forming a gate oxide film as an insulating layer on the surface of a semiconductor substrate; implanting boron ions for inhibiting the migration of a peeling substance in the semiconductor substrate to form an anti-diffusion layer in the semiconductor substrate; activating boron in the anti-diffusion layer by heat treatment; implanting hydrogen ions into the semiconductor substrate to form a peel layer in part of the semiconductor substrate at a side of the anti-diffusion layer opposite to the gate oxide film; bonding a glass substrate to the surface of the semiconductor substrate where the gate oxide film has been formed; and heat-treating the semiconductor substrate to separate part of the semiconductor substrate along the peel layer.
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申请公布号 |
US2005282019(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050147359 |
申请日期 |
2005.06.08 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUKUSHIMA YASUMORI;TAKAFUJI YUTAKA |
分类号 |
B32B9/04;H01L21/68;(IPC1-7):B32B9/04 |
主分类号 |
B32B9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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