发明名称
摘要 A method for forming an aluminum contact through an insulating layer (12) includes the formation of an opening (14). A barrier layer (16,18) is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer (16,18), and aluminum (26) deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum (26) is deposited over the refractory metal layer without breaking vacuum. <IMAGE>
申请公布号 JP3729882(B2) 申请公布日期 2005.12.21
申请号 JP19940296473 申请日期 1994.11.30
申请人 发明人
分类号 H01L23/522;C23C16/02;C23C16/20;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L23/522
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