发明名称 |
METHOD FOR FORMING FERROELECTRIC THIN FILM |
摘要 |
There is provided a method of forming a ferroelectric thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.). The method of forming a ferroelectric thin film comprising vinylidene fluoride homopolymer comprises the step (i) for preparing a green powder of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator, the step (ii) for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component, and the step (iii) for subjecting the thin film of vinylidene fluoride homopolymer formed in the step of above (ii) to polarization. <IMAGE>
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申请公布号 |
EP1607986(A1) |
申请公布日期 |
2005.12.21 |
申请号 |
EP20040722986 |
申请日期 |
2004.03.24 |
申请人 |
DAIKIN INDUSTRIES, LIMITED |
发明人 |
ARAKI, TAKAYUKI,;KODANI, TETSUHIRO, |
分类号 |
C08F14/22;C23C14/12;H01B1/12;H01B3/00;H01B3/44;H01B17/56;H01B19/00;(IPC1-7):H01B19/00 |
主分类号 |
C08F14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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