发明名称 |
FIELD EFFECT TRANSISTOR IMPROVABLE JUNCTION ABRUPTNESS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.</p> |
申请公布号 |
KR20050119424(A) |
申请公布日期 |
2005.12.21 |
申请号 |
KR20040044512 |
申请日期 |
2004.06.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, CHANG WOO;PARK, DONG GUN;KIM, DONG WON;CHOI, DONG UK;YEO, KYOUNG HWAN |
分类号 |
H01L29/78;H01L21/336;H01L29/08;H01L29/10;H01L29/76;H01L29/786;H01L29/788;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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