发明名称 |
Magnetoresistive structures and magnetic recording disc drive |
摘要 |
<p>The present invention relates generally to the magnetic information storage technology, and particularly, to magnetic recording disc drives including a sensor having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure or magnetic random access memory device including a magnetic memory element (corresponding to a capacitor of DRAM) having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure. More particularly, the present invention relates to a spin valve magnetoresistive structure employed in the sensor of magnetic recording disc drive or tunnel junction magnetoresistive structure employed in the magnetic storage element of magnetic random access memory device. <IMAGE></p> |
申请公布号 |
EP1471543(A3) |
申请公布日期 |
2005.12.21 |
申请号 |
EP20040400023 |
申请日期 |
2004.04.23 |
申请人 |
KOREA UNIVERSITY FOUNDATION |
发明人 |
PARK, JEONG-SUK;LEE, SEONG-RAE;KIM, YOUNG-KEUN |
分类号 |
G11C11/15;G11B5/00;G11B5/31;G11B5/39;G11C11/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01F10/32 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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