发明名称 PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA PROCESSING
摘要 There is provided a plasma processing system and method capable of decreasing the non-uniformity of a field distribution on the surface of an electrode and making the density of plasma uniform, in a plasma processing using a high density plasma which can cope with a further scale down. First and second electrodes 21 and 5 are provided in a chamber so as to face each other. A feeder plate 52 is arranged so as to be slightly spaced from the opposite surface of a surface serving as a feeding plane of the first electrode facing the second electrode 5. A feeder rod 51 is connected to the feeder plate 52 at a position which is radially shifted from a position corresponding to the center of the feeding plane of the first electrode 21. The feeder plate 52 is rotated to rotate the feeding position of the feeder rod 51 on the feeding plane of the first electrode. A high frequency electric power is thus fed to form a high frequency electric field between the first and second electrodes 21 and 5 to form plasma to plasma-process a substrate W. <IMAGE>
申请公布号 EP1213749(A4) 申请公布日期 2005.12.21
申请号 EP20000951961 申请日期 2000.08.11
申请人 TOKYO ELECTRON LIMITED 发明人 TOMOYASU, MASAYUKI
分类号 H01L21/302;B01J19/08;C23C16/52;H01J37/32;H01L21/3065;H05H1/46 主分类号 H01L21/302
代理机构 代理人
主权项
地址